tss.ml-condueto'i l/^ioducki, una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 thyristors TIC126D applications ? 12acontimunous on-state current ? 100a surge-current ? glass passivated ? max igt of 20ma absolute maximum ratings(ta=25'c) symbol vdrm vrrm ij(av) it(rms) itm pgm pc(av) tj tstg rth(j-c) rthg-a) parameter repetitive peak off-state voltage repetitive peak reverse voltage on-state current tc=80c rms on-state current tc=80c surge peak on-state current peak gate power pw*s300 u s average gate power operating junction temperature storage temperature thermal resistance, junction to case thermal resistance, junction to ambient min 400 400 7.5 12 100 5 1 110 -40-+125 2.4 62.5 unit v v a a a w w c c c/w c/w -k electrical characteristics (tc=25t unless otherwise specified) symbol irrm idrm vtm igt vgt ih parameter repetitive peak reverse current repetitive peak off-state current on-state voltage gate-trigger current gate-trigger voltage holding current conditions vrm=vrrm,tj=110'c vrm=vrrm,tj=110c !tm= 12a vaa=6v; rl=100q vaa=6v; rl=1000 vaa=6v; rgk=1kq,lt= 100ma min typ, max 2.0 2.0 1.4 20 1.5 40 unit ma ma v ma v ma nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
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